Samsung has developed what it claims as the industry’s highest-performing UFS 4.0 memory implementing the newest Joint Electron Device Engineering Council (JEDEC) standards. The new storage solution has a memory bandwidth of 23.2 Gbps/lane, twice what the current UFS 3.1 can offer.
The new memory uses Samsung’s 7th-generation V-NAND and a proprietary controller, giving it a sequential read and write speeds of up to 4200MB/s and 2800MB/s. It’s also 46% more efficient than UFS 3.1, measuring data speeds of 6MB/s per milliamp. This means that battery life will be better despite the increased storage speeds.
While size variants will go as high as 1TB, the chip will be relatively compact at 11mm x 13mm x 1mm. Production is expected to start in the third quarter of 2022. The new memory has also received the JEDEC Board of Directors’ approval.
Samsung claims that the new solution is perfect for 5G phones considering the amount of data these phones will be able to download and store, thanks to the faster internet speeds. The company also notes that the new memory should work well with AR. VR and automotive applications in the future.
|UFS 4.0 has a memory bandwidth of 23.2Gbps, twice that of UFS 3.1|
|The chip has sequential read and write speeds of 4200MB/s and 2800MB/s, respectively.|
|It’s also 46% more energy-efficient as compared to UFS 3.1, transferring at a rate of 6MB/s per mA.|